HAT2058R-EL-E RENESAS [Renesas Technology Corp], HAT2058R-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2058R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2058R, HAT2058RJ
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 7
4.0
3.0
2.0
1.0
1.0
0.8
0.6
0.4
0.2
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
10 V
Typical Output Characteristics
Gate to Source Voltage
2
4
50
8
6 V
4
100
12
6
150
Pulse Test
Pulse Test
V
Ta (°C)
V
V
16
GS
I
8
D
GS
DS
= 4 A
= 2 V
1 A
2 A
4 V
(V)
(V)
200
10
20
0.03
0.01
0.05
0.02
0.01
100
0.3
0.1
Static Drain to Source on State Resistance
0.5
0.2
0.1
30
10
10
3
1
8
6
4
2
0
0.1 0.3
0.1 0.2
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
1 Drive Operation
V
Pulse Test
Operation in
this area is
limited by R
Note 6:
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
= 10 V
Tc = 75°C
Drain Current
1
0.5 1
1
vs. Drain Current
DS (on)
3
V
2
GS
2
= 4 V
10
10 V
3
30
5
–25°C
I
D
10 µs
25°C
Pulse Test
100
10
(A)
V
V
4
GS
DS
20
300
(V)
(V)
1000
50
5