HAT2064R-EL-E RENESAS [Renesas Technology Corp], HAT2064R-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2064R-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2064R
Main Characteristics
Rev.9.00 Sep 07, 2005 page 3 of 6
0.20
0.16
0.12
0.08
0.04
4.0
3.0
2.0
1.0
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
4.5 V
10 V
Gate to Source Voltage
2
4
50
8
4
3.5 V
100
12
6
V
GS
150
Pulse Test
Pulse Test
Ta (°C)
V
V
I
16
D
= 2.5 V
8
GS
DS
= 10 A
5 A
2 A
3 V
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
0
5
2
1
0.1
0.1 0.2 0.5
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
V
Pulse Test
Note 4:
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
= 10 V
Tc = 75°C
Drain Current
1
vs. Drain Current
1
1
DS (on)
V
2
GS
2
10 V
3
= 4.5 V
5
3
I
10
10 20
–25°C
D
25°C
10 µs
(A)
V
V
4
30
GS
DS
50
(V)
(V)
100
100
5