HAT2099H_05 RENESAS [Renesas Technology Corp], HAT2099H_05 Datasheet
HAT2099H_05
Related parts for HAT2099H_05
HAT2099H_05 Summary of contents
Page 1
HAT2099H Silicon N Channel Power MOS FET Power Switching Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 2.9 m typ. ( (on) GS Outline RENESAS Package ...
Page 2
HAT2099H Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle ...
Page 3
HAT2099H Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 4 Drain to Source Voltage Drain ...
Page 4
HAT2099H Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 4 – Case Temperature Body-Drain Diode Reverse ...
Page 5
HAT2099H Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 Source to Drain Voltage 0.5 0.3 0.1 0.03 0.01 10 µ ...
Page 6
HAT2099H Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V Rev.5.00 Sep 07, 2005 page Vout Monitor Vin R L Vout d(on) Switching Time Waveform 90% 10% 10% 10% ...
Page 7
HAT2099H Package Dimensions JEITA Package Code RENESAS Code SC-100 PTZZ0005DA-A 1 Ordering Information Part Name HAT2099H-EL-E 2500 pcs Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering ...
Page 8
Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...