HAT2129H-EL-E RENESAS [Renesas Technology Corp], HAT2129H-EL-E Datasheet - Page 3

• Manufacturer Part Number: HAT2129H-EL-E
• Description: Silicon N Channel Power MOS FET Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2129H
Main Characteristics
Rev.5.00 Sep 20, 2005 page 3 of 7
200
150
100
40
30
20
10
50
40
30
20
10
50
0
0
0
Drain to Source Saturation Voltage vs.
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
10 V
7 V
Gate to Source Voltage
2
4
4.8 V
50
4
8
100
12
6
V
Pulse Test
Tc (°C)
150
Pulse Test
GS
I
V
D
V
16
8
GS
= 15 A
= 4.6 V
DS
10 A
4.2 V
3.8 V
5 A
(V)
(V)
200
20
10
1000
0.01
100
100
Static Drain to Source on State Resistance
0.1
50
40
30
20
10
50
20
10
10
5
2
1
1
0
0.1
Drain to Source Voltage
1
Gate to Source Voltage
Pulse Test
V
Pulse Test
Tc = 75°C
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
V
= 10 V
3
GS
2
Drain Current
= 7 V
vs. Drain Current
10 V
10
1
4
30
25°C
-25°C
6
100
10
I
D
V
(A)
V
DS
8
300
GS
(V)
1000
(V)
100
10