HAT2179R-EL-E RENESAS [Renesas Technology Corp], HAT2179R-EL-E Datasheet
HAT2179R-EL-E
Manufacturer Part Number
HAT2179R-EL-E
Description
Silicon N Channel MOS FET High Speed Power Switching
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.HAT2179R-EL-E.pdf
(4 pages)
HAT2179R
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1570-0100 Rev.1.00 Jul 06, 2007
Page 1 of 3
Low on-resistance
Low drive current
High density mounting
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
10 s, duty cycle
Item
8
7
6
5
1%
1 2
3 4
I
I
DR (pulse)
D (pulse)
Symbol
Pch
V
V
Tstg
Tch
I
GSS
I
DSS
DR
D
Note2
Note1
Note1
G
4
D
S S S
5 6 7 8
1 2 3
D D D
–55 to +150
10 s
Ratings
600
150
0.7
2.0
0.7
2.0
2.5
30
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1570-0100
Source
Gate
Unit
Jul 06, 2007
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.1.00
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