HAT2215R-EL-E RENESAS [Renesas Technology Corp], HAT2215R-EL-E Datasheet - Page 5

• Manufacturer Part Number: HAT2215R-EL-E
• Description: Silicon N Channel Power MOS FET High Speed Power Switching
• Manufacturer: RENESAS [Renesas Technology Corp]

HAT2215R, HAT2215RJ
Rev.3.00 Dec. 22, 2004 page 5 of 7
Vin
10 V
10
5
0
Source to Drain Voltage
Switching Time Test Circuit
Vin
10 V
Reverse Drain Current vs.
0.4
Vin Monitor
Rg
Avalanche Test Circuit
Source to Drain Voltage
V
Monitor
10 V
5 V
50 Ω
DS
0.8
Rg
V
D.U.T.
1.2
GS
= 0 V, –5 V
D. U. T
Pulse Test
I
Monitor
V
AP
1.6
R
SD
L
V
= 30 V
L
DS
Vout
Monitor
(V)
2.0
V
DD
0
V
2.0
1.6
1.2
0.8
0.4
DD
0
td(on)
25
Vout
Vin
E
Maximum Avalanche Energy vs.
AR
Channel Temperature Derating
Channel Temperature Tch (°C)
I
Switching Time Waveform
AP
50
=
Avalanche Waveform
10%
1
2
10%
I
D
90%
L • I
tr
75
AP
2
•
100
I
V
duty < 0.1 %
Rg > 50 Ω
AP
td(off)
DD
V
= 3.4 A
90%
DSS –
= 50 V
V
125
DSS
V
DS
V
90%
DD
V
(BR)DSS
10%
150
t
f