INA-12063-TR1 Agilent(Hewlett-Packard), INA-12063-TR1 Datasheet - Page 2

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INA-12063-TR1

Manufacturer Part Number
INA-12063-TR1
Description
1.5 GHz Low Noise Self-Biased Transistor Amplifier
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
INA-12063 Absolute Maximum Ratings
Electrical Specifications,
Notes:
1. See Test Circuit in Figure 32.
2. See Test Circuit in Figure 33.
3. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during
4. I
Symbol
Symbol
the initial characterization of this product, and is intended to be used as an estimate for distribution of the typical
specification.
P
dd
NF
IP
G
I
1dB
T
dd
P
P
3
is the total current into Pins 1, 4, and 6 of the device, i.e. I
V
V
T
I
STG
c
in
d
c
j
Power Gain (|S
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Device Current
Supply Voltage, to Ground
Collector Voltage
Collector Current
CW RF Input Power
Junction Temperature
Storage Temperature
Parameter
Parameters and Test Conditions
21
[4]
|
2
)
T
C
= 25 C, V
Units
dBm
d
mA
V
V
= 3 V, unless noted
C
C
250 MHz IF Amp
6-117
900 MHz LNA
f = 900 MHz
f = 250 MHz
f = 900 MHz
f = 250 MHz
f = 250 MHz
f = 900 MHz
f = 250 MHz
f = 900 MHz
dd
Maximum
= I
Absolute
-65 to 150
c
150
+ I
15
13
7
7
bias
[1]
[2]
[1]
[2]
[1]
[2]
[1]
[2]
[1]
[2]
[1]
+ I
Units Min. Typ. Max. Std.Dev.
dBm
dBm
mA
d
dB
dB
.
Notes:
1. Operation of this device above any
2. T
14.5
one of these limits may cause
permanent damage.
temperature at the package pins
where contact is made to the
circuit board).
C
Thermal Resistance
= 25 C (T
2.0
5.0
1.5
16
19
15
-7
0
2
5
j-c
= 170 C/W
C
is defined to be the
2.6
7
0.36
[2]
0.2
0.6
:
[3]

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