INA-30311-TR1 Agilent(Hewlett-Packard), INA-30311-TR1 Datasheet - Page 2

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INA-30311-TR1

Manufacturer Part Number
INA-30311-TR1
Description
1 GHz Low Noise Silicon MMIC Amplifier
Manufacturer
Agilent(Hewlett-Packard)
Datasheet
Absolute Maximum Ratings
INA-30311 Electrical Specifications
INA-30311 Typical Scattering Parameters
Note:
3. Reference plane per Figure 9 in Applications Information section.
Symbol
Symbol
Freq.
VSWR
GHz
0.05
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.60
1.80
2.00
2.20
2.40
2.50
T
P
V
NF
IP
P
G
I
T
STG
1dB
CC
cc
in
d
p
j
3
Mag
0.09
0.09
0.10
0.13
0.16
0.18
0.21
0.22
0.24
0.25
0.26
0.27
0.27
0.27
0.27
0.27
0.27
0.26
0.26
Power Gain (|S
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Input VSWR
Device Current
Group Delay
Device Voltage, to ground
CW RF Input Power
Junction Temperature
Storage Temperature
S
11
Ang
-107
-122
-144
-162
-177
173
163
156
150
147
-16
-29
-42
-59
-75
-92
Parameter
-2
-6
-1
Parameters and Test Conditions
21
|
16.14
16.07
15.90
15.56
15.04
16.12
16.11
16.12
14.34
13.44
12.53
10.50
8.50
6.69
5.01
3.58
2.35
1.21
0.75
2
dB
)
Mag
6.40
6.39
6.40
6.41
6.36
6.24
6.00
5.65
5.21
4.70
4.23
3.35
2.66
2.16
1.78
1.51
1.31
1.15
1.09
S
21
Units
dBm
[3]
V
Ang
-109
-122
-135
-155
-173
172
159
147
136
126
122
C
C
-12
-25
-38
-52
-66
-81
-95
-6
, T
C
6-141
= 25 C, Z
[3]
-38.1
-38.2
-38.4
-38.9
-39.4
-40.1
-40.7
-40.7
-39.6
-37.6
-35.5
-32.3
-29.6
-27.5
-25.7
-24.1
-22.5
-21.4
-20.9
dB
, T
Maximum
Absolute
-65 to 150
C
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
= 25 C, Z
+13
150
12
O
0.012
0.012
0.012
0.011
0.011
0.010
0.009
0.009
0.011
0.013
0.017
0.024
0.033
0.042
0.052
0.062
0.075
0.085
0.091
Mag
= 50 , V
S
12
[1]
O
= 50 , V
Ang
100
101
100
13
19
27
40
57
74
86
94
99
97
95
92
91
Notes:
1. Operation of this device above any one
2. T
CC
2
4
8
Units
dBm
dBm
of these limits may cause permanent
damage.
temperature at the package pins where
contact is made to the circuit board).
mA
dB
dB
ps
C
= 3 V
= 25 C (T
Thermal Resistance
CC
Mag
0.57
0.56
0.56
0.55
0.54
0.52
0.50
0.47
0.46
0.44
0.43
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.41
Min.
= 3 V
j-c
11
C
= 550 C/W
S
is defined to be the
22
Ang
-11
-14
-18
-20
-23
-24
-24
-25
-26
-27
-28
-30
-32
-35
-37
-39
-1
-3
-7
Typ.
325
3.5
-11
1.7
6.3
13
-2
Factor
[2]
4.35
4.43
4.41
4.83
4.88
5.60
6.58
7.26
6.49
6.23
5.35
4.83
4.43
4.31
4.22
4.17
3.97
4.04
3.99
Max.
K
:
7.5

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