K6R1004C1B SAMSUNG [Samsung semiconductor], K6R1004C1B Datasheet - Page 3

• Manufacturer Part Number: K6R1004C1B
• Description: 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
• Manufacturer: SAMSUNG [Samsung semiconductor]

DC AND OPERATING CHARACTERISTICS
K6R1004C1B-C
RECOMMENDED DC OPERATING CONDITIONS
* V
** V
CAPACITANCE*
* Capacitance is sampled and not 100% tested.
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
* V
Input Leakage Current
Output Leakage Current
Operating Current
Standby Current
Output Low Voltage Level
Output High Voltage Level
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Input/Output Capacitance
Input Capacitance
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CC
IL
IH
(Min) = -2.0V a.c(Pulse Width
=5.0V 5%, Temp.=25 C
(Max) = V
Parameter
Parameter
CC +
CC
Item
Supply Relative to V
2.0V a.c (Pulse Width
Parameter
(T
A
.
=25 C, f=1.0MHz)
6ns) for I
SS
Symbol
V
SS
V
I
V
I
I
I
OH1
6ns) for I
SB1
I
CC
LO
SB
LI
OL
OH
Symbol
V
V
*
Symbol
V
V
20mA.
CC
SS
IH
IL
C
C
I/O
IN
V
CS=V
V
Min. Cycle, 100% Duty
CS=V
I
Min. Cycle, CS=V
f=0MHz, CS V
V
I
I
I
OUT
OL
OH
OH1
20mA.
IN
OUT
IN
=8mA
=-4mA
=V
=0mA
=-0.1mA
V
=V
SS
IH
IL,
CC
SS
or OE=V
V
-0.2V or V
to V
IN
to V
=V
CC
-0.5*
Min
(T
Test Conditions
4.5
2.2
IH
Test Conditions
CC
0
CC
- 3 -
A
or V
IH
V
=0 to 70 C, Vcc=5.0V 10%, unless otherwise specified)
IH
Symbol
-0.2V,
V
IN
V
IN
or WE=V
T
I/O
V
IN
, V
P
IL,
T
STG
CC
0.2V
=0V
D
A
(T
=0V
OUT
A
=0 to 70 C)
IL
Typ
5.0
0
-
-
10ns
12ns
8ns
-0.5 to 7.0
-0.5 to 7.0
-65 to 150
MIN
Rating
0 to 70
-
-
1.0
V
CC
Min
2.4
Max
-2
-2
5.5
0.8
+0.5**
-
-
-
-
-
-
-
0
PRELIMINARY
CMOS SRAM
Max
8
6
Preliminary
PRELIMINARY
Max
3.95
150
145
140
0.4
50
10
2
2
-
February 1998
Unit
W
V
V
C
C
Unit
V
V
V
V
Unit
pF
pF
Unit
Rev 2.0
mA
mA
V
V
V
A
A