K6R1004C1C SAMSUNG [Samsung semiconductor], K6R1004C1C Datasheet - Page 4

• Manufacturer Part Number: K6R1004C1C
• Description: 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
• Manufacturer: SAMSUNG [Samsung semiconductor]

K6R1004C1C-C/C-L, K6R1004C1C-I/C-P
TEST CONDITIONS
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
AC CHARACTERISTICS
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
Output Loads(A)
D
* Capacitive Load consists of all components of the
OUT
test environment.
Parameter
Z
O
= 50
Parameter
(T
A
=0 to 70 C, V
Symbol
t
t
t
t
t
t
t
OHZ
t
t
t
t
OLZ
CO
OH
RC
AA
OE
HZ
PU
PD
LZ
R
L
= 50
30pF*
CC
K6R1004C1C-10
Min
10
=5.0V 10%, unless otherwise noted.)
3
0
0
0
3
0
-
-
-
-
V
L
= 1.5V
- 4 -
Max
10
10
10
5
5
5
-
-
-
-
-
Output Loads(B)
for t
HZ
K6R1004C1C-12
Min
12
3
0
0
0
3
0
, t
-
-
-
-
* Including Scope and Jig Capacitance
LZ
, t
WHZ
, t
Max
12
12
12
OW
6
6
6
D
-
-
-
-
-
See below
255
0V to 3V
OUT
Value
, t
1.5V
3ns
OLZ
PRELIMINARY
& t
K6R1004C1C-15
Min
OHZ
15
CMOS SRAM
3
0
0
0
3
0
-
-
-
-
PRELIMINARY
September 2001
Max
15
15
15
7
7
7
-
-
-
-
-
Revision 3.0
+5.0V
480
5pF*
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns