FW216A SANYO [Sanyo Semicon Device], FW216A Datasheet
FW216A
Related parts for FW216A
FW216A Summary of contents
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... Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Package Dimensions unit : mm (typ) 7072-001 4 1.27 0.254 0.445 FW216A SANYO Semiconductors N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS Duty cycle≤ When mounted on ceramic substrate (2000mm P T ...
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... Drain-to-Source Voltage FW216A Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =35V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V =4. (on =4.5A =10V R DS (on =2A =4. (on =2A =4.0V ...
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... Drain Current =10V =4. Total Gate Charge FW216A 200 Ta=25 ° C 150 100 --60 --40 --20 IT16699 =10V ...
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... Ambient Temperature °C Note on usage : Since the FW216A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...