K6T4016C3B-B SAMSUNG [Samsung semiconductor], K6T4016C3B-B Datasheet - Page 7
K6T4016C3B-B
Manufacturer Part Number
K6T4016C3B-B
Description
256Kx16 bit Low Power CMOS Static RAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K6T4016C3B-B.pdf
(9 pages)
K6T4016C3B Family
TIMING WAVEFORM OF WRITE CYCLE(2)
TIMING WAVEFORM OF WRITE CYCLE(1)
Address
CS
UB, LB
WE
Data in
Data out
Address
CS
UB, LB
WE
Data in
Data out
Data Undefined
High-Z
High-Z
t
t
AS(3)
AS(3)
(CS Controlled)
(WE Controlled)
t
WHZ
t
t
AW
7
CW(2)
t
AW
t
t
t
WC
WC
CW(2)
t
BW
t
BW
t
WP(1)
t
WP(1)
t
DW
t
DW
Data Valid
Data Valid
t
t
WR(4)
WR(4)
t
DH
t
DH
t
OW
High-Z
CMOS SRAM
High-Z
Revision 5.0
May 2001