HSMS-2702 HP [Agilent(Hewlett-Packard)], HSMS-2702 Datasheet - Page 7

• Manufacturer Part Number: HSMS-2702
• Description: High Performance Schottky Diode for Transient Suppression
• Manufacturer: HP [Agilent(Hewlett-Packard)]

Figure 7. Forward Current vs.
Forward Voltage at 25°C.
Because the automatic, pick-and-
place equipment used to assemble
these products selects dice from
adjacent sites on the wafer, the
two diodes which go into the
HSMS-2702 or HSMS-270C (series
pair) are closely matched —
without the added expense of
testing and binning.
Current Handling in Clipping/
Clamping Circuits
The purpose of a clipping/clamp-
ing diode is to handle high cur-
rents, protecting delicate circuits
downstream of the diode. Current
handling capacity is determined
by two sets of characteristics,
those of the chip or device itself
and those of the package into
which it is mounted.
noisy data-spikes
long cross-site cable
Figure 8. Two Schottky Diodes
Are Used for Clipping/Clamping in
a Circuit.
300
100
.01
10
.1
1
pull-down
(or pull-up)
0
V
0.1
F
– FORWARD VOLTAGE (V)
0.2
current
limiting
HSMS-270x
0.3
0V
voltage limited to
Vs + Vd
0V – Vd
0.4
Vs
HBAT-540x
0.5
0.6
Consider the circuit shown in
Figure 8, in which two Schottky
diodes are used to protect a
circuit from noise spikes on a
stream of digital data. The ability
of the diodes to limit the voltage
spikes is related to their ability to
sink the associated current spikes.
The importance of current
handling capacity is shown in
Figure 9, where the forward
voltage generated by a forward
current is compared in two
diodes.
Figure 9. Comparison of Two
Diodes.
The first is a conventional
Schottky diode of the type gener-
ally used in RF circuits, with an R
of 7.7 Ω. The second is a Schottky
diode of identical characteristics,
save the R
conventional diode, the relatively
high value of R
voltage across the diode’s termi-
nals to rise as current increases.
The power dissipated in the diode
heats the junction, causing R
climb, giving rise to a runaway
thermal condition. In the second
diode with low R
does not take place and the
voltage across the diode terminals
is maintained at a low limit even
at high values of current.
6
5
4
3
2
1
0
0
I
F
– FORWARD CURRENT (mA)
S
0.1
of 1.0 Ω. For the
S
0.2
causes the
S
R
R
, such heating
s
s
= 7.7 Ω
= 1.0 Ω
0.3
0.4
S
to
0.5
S
Maximum reliability is obtained in
a Schottky diode when the steady
state junction temperature is
maintained at or below 150°C,
although brief excursions to
higher junction temperatures can
be tolerated with no significant
impact upon mean-time-to-failure,
MTTF. In order to compute the
junction temperature, Equations
(1) and (3) below must be simulta-
neously solved.
I
I
T
where:
I
I
V
R
T
I
n = diode ideality factor
θ
junction to case (diode lead)
T
temperature
Equation (1) describes the for-
ward V-I curve of a Schottky
diode. Equation (2) provides the
value for the diode’s saturation
current, which value is plugged
into (1). Equation (3) gives the
value of junction temperature as a
function of power dissipated in
the diode and ambient (lead)
temperature.
F
S
F
S
O
J
J
JC
F
A
S
= I
= I
= forward current
= saturation current
= V
= junction temperature
= saturation current at 25°C
= θ
= forward voltage
= series resistance
= ambient (diode lead)
= thermal resistance from
0
S
7
F
package
11600 (V
e
298
I
T
F
J
θ
JC
2
n
+ T
+ θ
nT J
e
F
–4060
A
– I
chip
F
R
S
T J
1
)
–1
–
298
1
(1)
(2)
(3)