H57V2622GMR-60X HYNIX [Hynix Semiconductor], H57V2622GMR-60X Datasheet - Page 8

• Manufacturer Part Number: H57V2622GMR-60X
• Description: 256Mb : x32 Dual Die Synchronous DRAM
• Manufacturer: HYNIX [Hynix Semiconductor]

ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
Note:
1. All voltages are referenced to V
2. V
3. V
AC OPERATING TEST CONDITION
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃, VDD=3.3±0.3V / VSS=0V)
Note:
1. See Next Page
Rev 1.0 / Oct. 2009
Ambient Temperature (Commercial Temp.)
Ambient Temperature (Industrial Temp.)
Storage Temperature
Voltage on Any Pin relative to V
Voltage on VDD supply relative to V
Short Circuit Output Current
Power Dissipation
Soldering Temperature
Power Supply Voltage
Input High Voltage
Input Low Voltage
AC Input High / Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise / Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
IH(
IL
(min) is acceptable -2.0V for a pulse width with <= 3ns of duration.
Max) is acceptable VDDQ + 2V for a pulse width with <= 3ns of duration.
Parameter
Parameter
.
Parameter
Time
SS
= 0V.
SS
SS
V
Symbol
DD
V
V
(Commercial : TA = 0~70℃, Industrial : TA = -40~85℃)
, V
IH
IL
DDQ
V
V
Symbol
T
DD
IN
SOLDER
T
Min
-0.3
I
, V
, V
3.0
2.0
P
T
STG
OS
A
D
V
Symbol
OUT
DDQ
V
tR / tF
IH
V
outref
CL
trip
Synchronous DRAM Memory 256Mbit
/ V
IL
V
DDQ
Max
3.6
0.8
0.5 x V
0.5 x V
2.4 / 0.4
+ 0.3
Value
50
1
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
-40 ~ 85
260
Rating
0 ~ 70
DDQ
DDQ
H57V2622GMR Series
50
1
.
10
Unit
V
V
V
Unit
ns
pF
V
V
V
Note
o
1, 2
1, 3
Unit
C
mA
o
o
o
1
W
V
V
Note
C
C
C
.
1
Sec
8