DMN2005K_0711 DIODES [Diodes Incorporated], DMN2005K_0711 Datasheet
DMN2005K_0711
Manufacturer Part Number
DMN2005K_0711
Description
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Manufacturer
DIODES [Diodes Incorporated]
Datasheet
1.DMN2005K_0711.pdf
(4 pages)
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Features
•
•
•
•
•
•
•
•
Notes:
DMN2005K
Document number: DS30734 Rev. 5 - 2
Low On-Resistance
Very Low Gate Threshold Voltage, 0.9V Max.
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
ESD Protected Gate
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Characteristic
ESD protected
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Continuous
Pulsed (Note 3)
TOP VIEW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Symbol
R
BV
V
⏐Y
DS (ON)
I
I
GS(th)
www.diodes.com
GSS
DSS
DSS
fs
⏐
SOT-23
1 of 4
0.53
Min
20
40
Mechanical Data
⎯
⎯
⎯
⎯
Symbol
Symbol
T
•
•
•
•
•
•
•
•
j
V
V
R
, T
P
GSS
DSS
I
θ JA
D
D
STG
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Gate
Protection
Diode
Gate
Equivalent Circuit
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Drain
Source
Max
0.9
3.5
1.7
⎯
⎯
10
±5
Body
Diode
-65 to +150
Unit
mS
μA
μA
Ω
V
V
Value
Value
±10
300
600
350
357
20
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
GS
DS
= 17V, V
= V
= 1.8V, I
= 2.7V, I
= 3V, I
= 0V, I
= ±8V, V
G
TOP VIEW
GS
Test Condition
, I
D
D
D
D
= 10A
= 100μA
D
D
GS
DS
= 100μA
= 200mA
= 200mA
= 0V
= 0V
S
DMN2005K
© Diodes Incorporated
°C/W
November 2007
Unit
Unit
mW
mA
°C
V
V
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DMN2005K_0711 Summary of contents
Page 1
Features • Low On-Resistance • Very Low Gate Threshold Voltage, 0.9V Max. • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • "Green" Device (Note 4) • ESD ...
Page 2
V = 2. =1.8V 1 1. 1.4V GS 0.6 0.4 0 DRAIN-SOURCE VOLTAGE (V) ...
Page 3
... T , AMBIENT TEMPERATURE (°C) A Fig. 7 Static Drain-Source, On-Resistance I , DRAIN CURRENT (A) D Fig. 9 Forward Transfer Admittance vs. Drain Current Ordering Information (Note 6) Part Number DMN2005K-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date Code Key Year 2006 Code T Month Jan Feb Code ...
Page 4
Package Outline Dimensions TOP VIEW Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other ...