DMN2400UFB4-7 DIODES [Diodes Incorporated], DMN2400UFB4-7 Datasheet - Page 2

• Manufacturer Part Number: DMN2400UFB4-7
• Description: N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 4) V
Pulsed Drain Current (Notes 4 & 5)
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
Gate-Source Leakage
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
4. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
5. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
Characteristic
Characteristic
@T
A
Characteristic
= 25°C unless otherwise specified
J
= 25°C
GS
= 4.5V
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Steady
State
Symbol
R
BV
V
www.diodes.com
DS (ON)
t
t
I
I
I
C
|Y
V
C
GS(th)
C
Q
Q
D(on)
D(off)
DSS
GSS
GSS
Q
oss
t
t
SD
rss
DSS
iss
gs
gd
r
fs
f
g
T
T
|
A
A
= 25°C
= 85°C
2 of 6
Min
0.5
20
Symbol
T
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
J,
R
P
T
θ JA
D
STG
36.0
0.07
4.11
3.82
14.8
Typ
1.0
0.7
5.7
4.2
0.5
0.1
9.6
-
-
-
-
-
-
-
-
Symbol
V
V
I
DSS
GSS
DM
I
D
Max
±1.0
0.55
0.75
100
±50
0.9
0.9
1.2
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +150
Value
0.47
Unit
258
nC
nC
nC
nA
μA
μA
pF
pF
pF
Ω
ns
ns
ns
ns
V
V
S
V
Value
0.75
0.55
±12
20
3
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
ID =250mA
V
R
I
D
GS
DS
GS
GS
DS
GS
GS
GS
DS
GS
DS
GS
DD
L
= 200mA
= 47Ω, R
= 0V, I
= 20V, V
= ±4.5V, V
= ±10V, V
= V
= 4.5V, I
= 2.5V, I
= 1.8V, I
= 10V, I
= 0V, I
=16V, V
=4.5V, V
= 10V, V
DMN2400UFB4
GS
Test Condition
, I
D
S
D
G
D
GS
= 150mA
= 250μA
D
D
D
GS
DS
GS
= 250μA
= 400mA
= 10Ω,
DS
= 600mA
= 500mA
= 350mA
DS
= 0V,
= 0V
= 10V,
= 4.5V,
© Diodes Incorporated
Units
°C/W
= 0V
mW
= 0V
°C
Units
October 2010
V
V
A
A