2MBI450U4N-170-50 FUJI [Fuji Electric], 2MBI450U4N-170-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI450U4N-170-50
• Description: IGBT MODULE
• Manufacturer: FUJI [Fuji Electric]

2MBI450U4N-170-50
Characteristics (Representative)
1000.0
1200
1000
1200
1000
100.0
800
600
400
200
800
600
400
200
10.0
1.0
0.1
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
0
0
0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
1
VGE=0V, f= 1MHz, Tj= 25°C
1
Tj= 25°C / chip
VGE=15V / chip
10
VGE=20V 15V
2
2
Tj=25°C
3
3
20
Coes
Cres
12V
Cies
Tj=125°C
4
4
10V
8V
30
5
5
2
2
1200
1000
800
600
400
200
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
10
8
6
4
2
0
Collector current vs. Collector-Emitter voltage (typ.)
0
5
0
0
Vcc=900V, Ic=450A, Tj= 25°C
Collector-Emitter voltage : VCE [V]
1
Dynamic Gate charge (typ.)
Gate-Emitter voltage : VGE [V]
VCE
10
Gate charge : Qg [nC]
500
Tj= 125°C/ chip
Tj=25°C / chip
2
15
VGE=20V 15V
3
1000
VGE
20
Ic=900A
Ic=450A
Ic=225A
4
IGBT Modules
12V
10V
8V
1500
5
25