CM150DU-24H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM150DU-24H_09 Datasheet - Page 4

• Manufacturer Part Number: CM150DU-24H_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
1
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
Single Pulse
T
I
C
2 3 5 7
C
IMPEDANCE CHARACTERISTICS
Per unit base = R
= 150A
COLLECTOR CURRENT I
= 25°C
2
GATE CHARGE Q
200
TRANSIENT THERMAL
10
3
–2
HALF-BRIDGE
2 3 5 7
5 7
( TYPICAL )
( TYPICAL )
( IGBT part )
V
TIME ( s )
CC
400
10
10
10
= 400V
2
–1
–5
th(j – c)
2 3 5 7
2 3 5 7
t
t
t
t
f
d(off)
d(on)
r
2
G
T
V
V
R
V
= 0.14K/W
600
j
( nC )
CC
GE
G
10
3
10
CC
= 125°C
= 2.1Ω
–4
C
0
= 600V
= ±15V
= 600V
2 3 5 7
2 3 5 7
( A )
5 7
800
10
10
10
10
10
10
3
3
2
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
1
0
10
1
–3
– di /dt = 300A /µs
T
Single Pulse
T
IMPEDANCE CHARACTERISTICS
j
2 3 5 7
C
= 25°C
Per unit base = R
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
TRANSIENT THERMAL
10
3
–2
2 3 5 7
HIGH POWER SWITCHING USE
5 7
( FWDi part )
( TYPICAL )
TIME ( s )
MITSUBISHI IGBT MODULES
10
10
10
2
–1
–5
th(j – c)
t
I
rr
rr
2 3 5 7
2 3 5 7
CM150DU-24H
2
= 0.24K/W
10
10
3
E
( A )
0
–4
INSULATED TYPE
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
3
3
2
7
5
3
2
7
5
3
2
–3
1
3
2
1
–1
–2
–3
Feb. 2009