CM150DU-24NFH_11 MITSUBISHI [Mitsubishi Electric Semiconductor], CM150DU-24NFH_11 Datasheet - Page 4

• Manufacturer Part Number: CM150DU-24NFH_11
• Description: HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
20
15
10
–1
–2
–3
5
0
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
0
10
SWITCHING TIME CHARACTERISTICS
0
GATE CHARGE CHARACTERISTICS
1
–3
Per unit base =
R
I
C
th(j–c)
2 3 5 7
IMPEDANCE CHARACTERISTICS
= 150A
COLLECTOR CURRENT I
2
200
= 0.19K/W
GATE CHARGE Q
TRANSIENT THERMAL
10
3
–2
HALF-BRIDGE
2 3 5 7
5 7
400
( TYPICAL )
( TYPICAL )
( IGBT part )
TIME ( s )
V
10
10
10
CC
2
–1
–5
600
= 400V
2 3 5 7
2 3 5 7
t
t
t
t
d(off)
d(on)
f
r
Conditions:
V
V
R
T
Inductive load
2
G
CC
GE
j
Single Pulse
T
G
V
= 125°C
C
( nC )
10
10
= 2.1Ω
3
CC
= 600V
= ±15V
= 25°C
800
C
0
–4
2 3 5 7
2 3 5 7
= 600V
( A )
5 7
1000
10
10
10
10
10
10
3
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
0
10
Per unit base =
R
1
–3
T
th(j–c)
IMPEDANCE CHARACTERISTICS
2 3 5 7
j
= 25°C
2
EMITTER CURRENT I
OF FREE-WHEEL DIODE
= 0.35K/W
TRANSIENT THERMAL
10
3
HIGH POWER SWITCHING USE
–2
2 3 5 7
MITSUBISHI IGBT MODULES
5 7
( FWDi part )
( TYPICAL )
CM150DU-24NFH
TIME ( s )
10
10
10
2
–1
–5
2 3 5 7
2 3 5 7
I
t
rr
rr
Conditions:
V
V
R
T
Inductive load
2
j
Single Pulse
T
CC
GE
G
= 25°C
C
10
3
E
10
= 2.1Ω
= 25°C
= 600V
= ±15V
( A )
–4
0
2 3 5 7
2 3 5 7
5 7
10
10
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
3
7
5
3
2
7
5
3
2
1
–3
Feb. 2009
3
2
1
–1
–2
–3