QM100 MITSUBISHI [Mitsubishi Electric Semiconductor], QM100 Datasheet - Page 4

• Manufacturer Part Number: QM100
• Description: HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

0.20
0.16
0.12
0.08
0.04
10
10
10
10
10
10
2
7
5
4
3
2
7
5
4
3
2
FORWARD BIAS SAFE OPERATING AREA
10
0
1
0
7
5
3
2
7
5
3
2
7
5
3
2
10
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
10
10
TRANSIENT THERMAL IMPEDANCE
–3
0
–1
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2 3 4 5 7
3
3
3
T
T
4
4
4
j
j
=25°C
=125°C
5
5
5
CURRENT (TYPICAL)
7
7
7
10
10
10
–2
1
1
TIME (s)
2
2
2
10
3
3
4
4
0
5
5
7
7
10
2 3 4 5 7
10
100µs
V
I
I
–1
2
C
B1
t
CC
=100A
t
f
w
2
2
=2A
t
s
=300V
=50µs
3
3
B2
4
4
5
5
(A)
CE
7
7
10
(V)
10
10
1
3
0
200
175
150
125
100
100
10
10
10
75
50
25
90
80
70
60
50
40
30
20
10
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER REVERSE VOLTAGE
2
1
0
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
100
=125°C
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
200
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
CEO
400
80
(V)
1.2
500
100 120
SECOND
BREAKDOWN
AREA
QM100CY-H
600
T
T
I
B2
–5A
C
1.6
j
j
=25°C
=125°C
INSULATED TYPE
=–2A
( C)
700
140
CE
800
160
2.0
(V)
Feb.1999