CM50TU-34KA_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM50TU-34KA_09 Datasheet - Page 3

• Manufacturer Part Number: CM50TU-34KA_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
100
10
10
10
80
60
40
20
COLLECTOR-EMITTER VOLTAGE V
EMITTER-COLLECTOR VOLTAGE V
0
6
5
4
3
2
1
0
7
5
3
2
7
5
3
2
3
2
1
0
0
1
COLLECTOR-EMITTER SATURATION
T
V
T
V
j
GE
FORWARD CHARACTERISTICS
j
GE
VOLTAGE CHARACTERISTICS
= 25°C
COLLECTOR CURRENT I
= 25°C
OUTPUT CHARACTERISTICS
= 15V
= 20V
T
T
20
2
15
14
j
j
FREE-WHEEL DIODE
= 25°C
= 125°C
2
(TYPICAL)
(TYPICAL)
(TYPICAL)
40
4
3
12
60
6
4
80
C
8
(A)
CE
EC
11
10
9
8
100
10
(V)
(V)
5
3
10
10
100
10
10
80
60
40
20
10
–1
–2
10
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
1
0
0
6
COLLECTOR-EMITTER SATURATION
–1
V
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
TRANSFER CHARACTERISTICS
CE
GE
2
VOLTAGE CHARACTERISTICS
8
3 5 7
= 10V
= 0V
T
T
4
j
j
= 25°C
= 125°C
CAPACITANCE–V
CHARACTERISTICS
10
HIGH POWER SWITCHING USE
10
MITSUBISHI IGBT MODULES
(TYPICAL)
(TYPICAL)
(TYPICAL)
0
8
12
2
3 5 7
CM50TU-34KA
14
12
10
16
1
CE
T
I
I
I
C
C
C
2
j
16
C
= 25°C
C
C
= 100A
= 50A
= 20A
GE
GE
3 5 7
oes
18
ies
res
(V)
(V)
CE
20
10
20
(V)
2
Feb. 2009