UPA801TC-T1 NEC [NEC], UPA801TC-T1 Datasheet - Page 3
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UPA801TC-T1
Manufacturer Part Number
UPA801TC-T1
Description
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Manufacturer
NEC [NEC]
Datasheet
1.UPA801TC-T1.pdf
(12 pages)
TYPICAL CHARACTERISTICS (T
10.00
1.00
230
200
100
20
18
16
14
12
10
0
8
6
4
2
0
0
0
1
Per
Element
V
f = 1 GHz
CE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
= 3 V
1
Ambient Temperature T
2 Elements in total
Collector Current I
50
2
10
3
100
C
4
(mA)
A
( C)
A
Free Air
I
I
I
I
I
I
I
I
CE
B
B
B
B
B
B
B
B
= +25 C)
= 160 A
= 140 A
= 120 A
= 100 A
= 80 A
= 60 A
= 40 A
= 20 A
(V)
5
Data Sheet P14548EJ1V1DS00
150
100
6
1 000
14.00
12.00
10.00
8.00
6.00
4.00
2.00
100
20
10
10
0
0.1
0
1
V
V
f = 1 GHz
CE
CE
= 3 V
= 3 V
Base to Emitter Voltage V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
1
0.5
10
C
C
10
(mA)
(mA)
BE
PA801TC
V
(V)
CE
= 3 V
100
100
1.0
3