UPA821TC-T1 NEC [NEC], UPA821TC-T1 Datasheet - Page 2

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UPA821TC-T1

Manufacturer Part Number
UPA821TC-T1
Description
NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Manufacturer
NEC [NEC]
Datasheet
ELECTRICAL CHARACTERISTICS (T
h
2
FE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feedback Capacitance
Insertion Power Gain
Noise Figure
Marking
h
FE
Notes 1. Pulse Measurement: PW
Rank
Value
CLASSIFICATION
Parameter
2. Capacitance between collector and base measured with a capacitance meter (auto balancing bridge
method). Emitter should be connected to the guard pin of capacitance meter.
70 to 140
FB
81
Symbol
|S
I
I
h
C
NF
CBO
EBO
f
21e
FE
T
re
|
2
V
V
V
V
V
V
V
CB
EB
CE
CE
CB
CE
CE
350 s, Duty Cycle
= 10 V, I
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
A
Data Sheet P14552EJ1V0DS00
= +25°C)
C
C
C
E
C
C
E
= 0
= 7 mA
= 7 mA, f = 1 GHz
= 0, f = 1 MHz
= 7 mA, f = 1 GHz
= 7 mA, f = 1 GHz
= 0
Conditions
Note 1
2 %
Note 2
MIN.
3.0
7.0
70
TYP.
4.5
0.7
9.0
1.2
MAX.
140
1.0
1.0
1.5
2.5
PA821TC
GHz
Unit
dB
dB
pF
A
A

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