BUK436W-200B PHILIPS [NXP Semiconductors], BUK436W-200B Datasheet

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BUK436W-200B

Manufacturer Part Number
BUK436W-200B
Description
PowerMOS transistor
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
PINNING - SOT429 (TO247)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCES
July 1997
PowerMOS transistor
SYMBOL
V
V
I
I
I
P
T
T
SYMBOL PARAMETER
R
R
D
D
DM
PIN
V
stg
j
DS
DGR
tot
tab
th j-mb
th j-a
1
2
3
GS
gate
drain
source
drain
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
DESCRIPTION
QUICK REFERENCE DATA
PIN CONFIGURATION
SYMBOL
V
I
P
R
D
DS
tot
DS(ON)
CONDITIONS
CONDITIONS
-
R
-
T
T
T
T
-
-
mb
mb
mb
mb
GS
1
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
= 20 k
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
2
1
3
MIN.
- 55
BUK436
-
-
-
-
-
-
-
-
SYMBOL
-200A
MIN.
19
12
76
-
-
-200A
MAX.
BUK436W-200A/B
0.16
200
125
19
MAX.
g
200
200
125
150
150
30
Product Specification
TYP.
45
-
-200B
17
11
68
-200B
MAX.
d
200
125
s
0.2
17
MAX.
1.0
-
Rev 1.000
UNIT
UNIT
˚C
˚C
W
UNIT
V
V
V
A
A
A
K/W
K/W
W
V
A

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BUK436W-200B Summary of contents

Page 1

... PIN CONFIGURATION CONDITIONS MIN ˚ 100 ˚ ˚ ˚ CONDITIONS 1 Product Specification BUK436W-200A/B MAX. MAX. UNIT -200A -200B 200 200 19 17 125 125 0.16 0.2 SYMBOL MAX. UNIT - 200 - 200 - 30 -200A -200B - 19 17 ...

Page 2

... Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad CONDITIONS - - -dI /dt = 100 Product Specification BUK436W-200A/B MIN. TYP. MAX. UNIT 200 - - V 2.1 3.0 4 0.1 1 100 ...

Page 3

... Fig.5. Typical output characteristics BUK436-200A,B 1 0.8 100 100 ms 0.2 0 1000 = 25 ˚C Fig.6. Typical on-state resistance Product Specification BUK436W-200A/B Zth j-mb / (K/W) BUKx56- 0.5 0.2 0.1 0.05 0. 1E-05 1E-03 1E- Fig.4. Transient thermal impedance f(t); parameter j-mb ...

Page 4

... GS(TO) BUK456-200A 1E-01 1E-02 1E-03 1E-04 1E-05 1E- ˚ 10000 1000 80 100 120 140 Fig.12. Typical capacitances f Product Specification BUK436W-200A/B VGS(TO max. 4 typ. 3 min -60 -40 - 100 120 140 Fig.10. Gate threshold voltage. = f(T ); conditions mA SUB-THRESHOLD CONDUCTION ...

Page 5

... Fig.13. Typical turn-on gate-charge characteristics f(Q ); conditions parameter July 1997 BUK456-200 40 VDS / V =40 30 160 f Product Specification BUK436W-200A BUK456-200A 150 VSDS / V Fig.14. Typical reverse diode current. ); conditions parameter T SDS Rev 1.000 ...

Page 6

... Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for SOT429 envelopes. 3. Epoxy meets UL94 V0 at 1/8". July 1997 16 max 5.3 7.3 seating 15.5 max plane 2 1.1 0.4 M 5.45 5.45 Fig.15. SOT429 (TO247); pin 2 connected to mounting base. 6 Product Specification BUK436W-200A/B 5.3 max 1.8 o 3.5 max 0.9 max Rev 1.000 ...

Page 7

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1997 BUK436W-200A/B 7 Product Specification Rev 1.000 ...

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