SG-10 EPSON [Epson Company], SG-10 Datasheet

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SG-10

Manufacturer Part Number
SG-10
Description
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR
Manufacturer
EPSON [Epson Company]
Datasheet

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31
Crystal oscillator
Products number
• Low current consumption.
• Small suited to high-density mounting.
• Mountable on a standard printed circuit board.
• Cylindrical low/medium-frequency crystal unit builtin, thus assuring high
SG-10
Q31 1 0 0 0 0 x x x x x 0 0
SIP LOW/MEDIUM-FREQUENCY CRYSTAL OSCILLATOR
Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
Output frequency range
Power source voltage
Temperature range
Frequency tolerance
Frequency temperature characteristics
Frequency voltage characteristics
Current consumption
Duty
Output voltage
Output load condition (fan out)
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
reliability.
Specifications (characteristics)
External dimensions
Item
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
0.25
4.6 Max.
V
Symbol
DD
N/C
T
S.R.
T
V
V
t
t
t
t
V
l
-GND
OSC
OPR
W
TLH
THL
fa
f
STG
f/f
OP
DD
OH
0
OL
/
t
0
L
2.1
(except for cases of 1/3 and 1/ 5 divided frequency.)
#1
2.54
E
32.768 kHz
#2
2.54
16.0 Max.
SG-10 B
10.0000 Hz to 153.6000 kHz
A: ±10 x 10
0.5
#3
1 TTL Max./15 pF Max.
+10 x 10
0131A
±5 x 10
-55 °
NO.
-10
-0.3 V to +7.0 V
1
2
3
±10 x 10
V
Specifications
40 % to 60 %
±5 x 10
4.5 V to 5.5 V
0.5 mA Max..
DD
60 ns Max.
50 ns Max.
0.4 V Max.
Pin terminal
°
1 s Max.
C
-1.0 V Min.
C to +70
GND
OUT
-6
V
-6
to +125 °
-6
/year Max.
DD
/ -120 x 10
B: ±50 x 10
-6
-6
Max.
Max.
°
C
(Unit: mm)
C
-6
-6
For frequencies other than the above, please consult us. (Min. order lot 10000 pcs.)
Oscillation source
Divided frequency
output
(calculation method)
Oscillation source
Divided frequency
Output frequency table
Output frequency example
Three drops on a hard board from 750 mm or excitation test
with 29400 m/s
-10 °C to +70 °C, taking Ta=+25 °C as the reference
For more than 1 ms until V
For output frequency, see the table below
Stored as bare product after unpacking
10.000 Hz, 50.000 Hz, 100.000 Hz, 1.000 kHz,
50.000 kHz , 76.800 kHz
32.768 kHz,60.000 kHz, 96.000 kHz, 100.000 kHz,
153.600 kHz
Oscillation source frequency x (any arbitrary one of 1/1, 1/2, 1/3,
1/4, 1/5, 1/6, 1/12) x (any arbitrary one of 1/1, 1/10, 1/100,
1/1000). Over 10.0 Hz range.
100.000 kHz ,153.600 kHz
Ta=+25 °C ±3 °C, V
4.800 kHz , 9.600 kHz, 19.200 kHz , 38.400 kHz,
32.768 kHz , 60.000 kHz
2
x 0.3 ms x 1/2 sine wave in 3 directions
Time at 4.5 V to be 0 s
TTL load/C-MOS load
1/2 V
V
No load condition
DD
=5 V Ta=+25 °C
I
I
DD
OH
OL
Remarks
= -40 µA
=1.6 mA
or 1.4 V level
Actual size
DD
=5 V, first year
DD
=0 V
, 96.000 kHz,
4.5 V.

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