HGTG30N60B3D_04 FAIRCHILD [Fairchild Semiconductor], HGTG30N60B3D_04 Datasheet - Page 7

• Manufacturer Part Number: HGTG30N60B3D_04
• Description: 60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Test Circuit and Waveforms
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in military,
industrial and consumer applications, with virtually no damage
problems due to electrostatic discharge. IGBTs can be
handled safely if the following basic precautions are taken:
©2004 Fairchild Semiconductor Corporation
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers, the
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage rating
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting springs
or by the insertion into conductive material such as
“ECCOSORBD™ LD26” or equivalent.
hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
of V
damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or
pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
FIGURE 19. INDUCTIVE SWITCHING TEST CIRCUIT
GEM
R
. Exceeding the rated V
G
= 3
L = 1mH
GE
can result in permanent
HGTG30N60B3D
+
-
V
DD
= 480V
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must not
exceed P
conduction losses (P
E
shown in Figure 20. E
power loss (I
integral of the instantaneous power loss (I
turn-off. All tail losses are included in the calculation for
E
MAX2
V
V
MAX1
I
CE
ON
OFF
GE
CE
and E
; i.e., the collector current equals zero (I
is defined by f
is defined by f
FIGURE 20. SWITCHING TEST WAVEFORMS
D
. A 50% duty factor was used (Figure 3) and the
OFF
CE
d(OFF)I
t
MAX1
d(OFF)I
are defined in the switching waveforms
x V
90%
10%
MAX2
C
CE
MAX1
or f
) are approximated by P
and t
ON
D
) during turn-on and E
t
fI
) is defined by P
MAX2
= (P
is the integral of the instantaneous
d(ON)I
= 0.05/(t
E
D
OFF
; whichever is smaller at each
90%
- P
CE
are defined in Figure 20.
C
) plots are possible using
d(OFF)I
)/(E
E
ON
OFF
D
10%
= (T
t
CE
d(ON)I
+ t
HGTG30N60B3D Rev. B2
+ E
C
JM -
OFF
d(ON)I
t
x V
CE
= (V
rI
ON
JM
CE
T
= 0).
is the
). The
CE
C
. t
).
)/R
) during
d(OFF)I
x I
CE
JC
)/2.
.