CM75DU-24F_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75DU-24F_09 Datasheet
CM75DU-24F_09
Related parts for CM75DU-24F_09
CM75DU-24F_09 Summary of contents
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... LABEL HIGH POWER SWITCHING USE ¡I C ..................................................................... ¡V CES ......................................................... ¡Insulated Type ¡2-elements in a pack Tc measured point 2–φ6.5 MOUNTING HOLES 13.5 TAB #110. t=0.5 2.5 16 C2E1 MITSUBISHI IGBT MODULES CM75DU-24F 75A 1200V Dimensions RTC E2 C1 RTC CIRCUIT DIAGRAM Feb. 2009 ...
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... E GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM75DU-24F HIGH POWER SWITCHING USE Ratings 1200 ±20 75 150 (Note 2) 75 (Note 2) 150 450 – ...
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... ies oes C res ( MITSUBISHI IGBT MODULES CM75DU-24F HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 150 COLLECTOR CURRENT I (A) ...
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... FWDi part: 2 Per unit base = – – Single Pulse 25° – CM75DU-24F 10 – 0.28K/W th(j–c) = 0.47K/W th(j– – – –3 10 –5 – ...