CM75TU-24H_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-24H_09 Datasheet - Page 3

• Manufacturer Part Number: CM75TU-24H_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

PERFORMANCE CURVES
150
125
100
10
10
75
50
25
0
COLLECTOR-EMITTER VOLTAGE V
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
EMITTER-COLLECTOR VOLTAGE V
2
1
1.0
0
0
COLLECTOR-EMITTER SATURATION
T
V
T
V
j
j
GE
GE
= 25°C
FORWARD CHARACTERISTICS
VOLTAGE CHARACTERISTICS
= 25°C
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
(V)
25
= 15V
= 20
1.5
T
T
2
j
j
FREE-WHEEL DIODE
= 25°C
= 125°C
50
( TYPICAL )
( TYPICAL )
( TYPICAL )
2.0
4
15
75
2.5
6
100
3.0
C
8
125
( A )
CE
EC
12
11
10
9
8
150
3.5
10
( V )
( V )
3
10
150
125
100
10
10
10
75
50
25
10
–1
10
0
8
6
4
2
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
V
GATE-EMITTER VOLTAGE V
T
GATE-EMITTER VOLTAGE V
CE
TRANSFER CHARACTERISTICS
GE
j
VOLTAGE CHARACTERISTICS
2
= 25°C
= 10V
3 5 7
= 0V
4
4
10
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
HIGH POWER SWITCHING USE
8
8
2
MITSUBISHI IGBT MODULES
3 5 7
12
12
10
1
T
T
j
j
I
CM75TU-24H
C
2
= 25°C
= 125°C
I
I
16
16
C
C
= 150A
GE
GE
C
C
C
3 5 7
INSULATED TYPE
= 75A
= 30A
ies
oes
res
( V )
( V )
CE
10
20
20
( V )
2
Feb. 2009