CM75TU-34KA_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM75TU-34KA_09 Datasheet - Page 4

• Manufacturer Part Number: CM75TU-34KA_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
4
3
2
1
0
10
1
0
10
0
–3
IGBT part:
Per unit base = R
FWDi part:
Per unit base = R
Conditions:
V
V
R
T
Inductive load
Single Pulse
T
SWITCHING CHARACTERISTICS
IMPEDANCE CHARACTERISTICS
2 3 5 7
CC
GE
j
G
C
= 125°C
COLLECTOR CURRENT I
= 25°C
= 4.2Ω
2
= 1000V
= ±15V
(IGBT part & FWDi part)
TRANSIENT THERMAL
10
3
–2
t
HALF-BRIDGE
d(off)
2 3 5 7
5 7
(TYPICAL)
t
f
TIME (s)
t
d(on)
t
r
10
th(j–c)
th(j–c)
10
10
1
–1
–5
2 3 5 7
2 3 5 7
= 0.19K/W
= 0.35K/W
2
10
10
3
0
–4
C
2 3 5 7
2 3 5 7
(A)
5 7
10
10
10
10
10
10
2
3
2
7
5
3
2
7
5
3
2
1
–3
–1
–2
–3
4
10
10
10
20
16
12
REVERSE RECOVERY CHARACTERISTICS
8
4
0
7
5
3
2
7
5
3
2
3
2
1
10
0
0
I
C
Conditions:
V
V
R
T
Inductive load
j
CC
GE
G
= 75A
= 25°C
= 4.2Ω
2
EMITTER CURRENT I
100
= 1000V
= ±15V
OF FREE-WHEEL DIODE
GATE CHARGE Q
3
CHARACTERISTICS
HIGH POWER SWITCHING USE
GATE CHARGE
V
MITSUBISHI IGBT MODULES
5 7
200
(TYPICAL)
(TYPICAL)
CC
I
t
= 800V
rr
rr
10
1
CM75TU-34KA
300
V
2
G
CC
(nC)
3
E
= 1000V
400
(A)
5 7
500
10
2
Feb. 2009