CM400DY-24A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], CM400DY-24A_09 Datasheet - Page 4

• Manufacturer Part Number: CM400DY-24A_09
• Description: IGBT MODULES HIGH POWER SWITCHING USE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

10
10
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
10
2
1
0
10
2
1
0
10
1
1
1
Esw(off)
Esw(on)
COLLECTOR CURRENT I
2
2
2
EMITTER CURRENT I
EMITTER CURRENT I
OF FREE-WHEEL DIODE
COLLECTOR CURRENT
RECOVERY LOSS vs. I
SWITCHING LOSS vs.
3
3
3
I
t
5 7
5 7
5 7
rr
rr
(TYPICAL)
(TYPICAL)
(TYPICAL)
10
10
10
2
2
2
Conditions:
V
V
R
T
Inductive load
C snubber at bus
Conditions:
V
V
R
T
Inductive load
C snubber at bus
j
CC
GE
G
j
CC
GE
G
= 125°C
= 125°C
= 0.78Ω
Conditions:
V
V
R
T
Inductive load
2
2
2
= 0.78Ω
= 600V
= ±15V
j
CC
GE
= 600V
= ±15V
G
= 25°C
3
3
3
= 0.78Ω
E
E
= 600V
= ±15V
(A)
(A)
C
E
(A)
Err
5 7
5 7
5 7
10
10
10
3
3
3
4
10
10
10
10
10
10
10
10
10
10
–1
–2
–3
10
10
7
5
3
2
7
5
3
2
7
5
3
2
0
3
7
5
3
2
2
7
5
3
2
2
7
5
3
2
1
7
5
3
2
1
0
10
–1
–1
–3
IGBT part:
Per unit base =
R
FWDi part:
Per unit base =
R
Conditions:
V
V
I
T
Inductive load
C snubber at bus
C
IMPEDANCE CHARACTERISTICS
th(j–c)
th(j–c)
2 3 5 7
j
CC
GE
= 400A
= 125°C
2
GATE RESISTANCE R
2
GATE RESISTANCE R
= 600V
= ±15V
= 0.046K/W
= 0.085K/W
(IGBT part & FWDi part)
TRANSIENT THERMAL
SWITCHING LOSS vs.
RECOVERY LOSS vs.
10
GATE RESISTANCE
GATE RESISTANCE
Esw(on)
Esw(off)
3
3
HIGH POWER SWITCHING USE
–2
2 3 5 7
Err
MITSUBISHI IGBT MODULES
5 7
5 7
(TYPICAL)
(TYPICAL)
TIME (s)
10
10
10
10
0
0
–1
–5
Conditions:
V
V
I
T
Inductive load
C snubber at bus
CM400DY-24A
E
2 3 5 7
2 3 5 7
j
CC
GE
= 400A
= 125°C
Single Pulse
T
Under the chip
2
2
C
= 600V
= ±15V
= 25°C
10
10
3
3
G
G
0
–4
(Ω)
(Ω)
2 3 5 7
2 3 5 7
5 7
5 7
10
10
10
10
10
10
10
7
5
3
2
7
5
3
2
1
1
1
–3
Feb. 2009
–1
–2
–3