MBR20H100CT-E1 BCDSEMI [BCD Semiconductor Manufacturing Limited], MBR20H100CT-E1 Datasheet - Page 4

• Manufacturer Part Number: MBR20H100CT-E1
• Description: HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
• Manufacturer: BCDSEMI [BCD Semiconductor Manufacturing Limited]

Absolute Maximum Ratings (Each Diode Leg) (Note 1)
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dP
Thermal Characteristics
Mar. 2011 Rev. 1. 4
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Parameter
Maximum Thermal Resistance
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated V
Peak Repetitive Forward Current
(Rated V
Non Repetitive Peak Surge Current (Surge Applied at Rated load
Conditions Half Wave, Single Phase, 60Hz)
Operating Junction Temperature (Note 2)
Storage Temperature Range
Voltage Rate of Change (Rated V
ESD (Machine Model=C)
ESD (Human Body Model=3B)
R
R
, Square Wave, 20kHz) T
) T
C
=162
o
C
R
)
C
Symbol
=160
θ
θ
JC
JA
o
C
Junction to Case
Junction to Ambient
4
Condition
Symbol
V
I
V
T
dv/dt
I
I
F (AV)
FRM
RWM
V
FSM
BCD Semiconductor Manufacturing Limited
RRM
T
STG
R
J
TO-220-3 (2)
TO-220-3 (2)
TO-220F-3
TO-220-3/
TO-220-3/
-65 to 175
10000
>8000
Value
>400
100
250
175
10
20
D
Value
/dT
2.0
2.5
60
MBR20H100C
J
<1/θ
Data Sheet
JA
.
V/µs
Unit
o
o
V
A
A
A
V
V
o
C
C
Unit
C/W