IC41SV4105-100J ICSI [Integrated Circuit Solution Inc], IC41SV4105-100J Datasheet - Page 4

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IC41SV4105-100J

Manufacturer Part Number
IC41SV4105-100J
Description
1Mx4 bit Dynamic RAM with Fast Page Mode
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
IC41SV4105
Functional Description
The IC41SV4105 are CMOS DRAMs optimized for high-
speed bandwidth, low power applications. During READ
or WRITE cycles, each bit is uniquely addressed through
the 10 address bits. These are entered 10 bits (A0-A9) at
a time. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS). RAS is used to latch the
first ten bits and CAS is used the latter ten bits.
Memory Cycle
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or aborted
before the minimum t
must not be initiated until the minimum precharge time t
t
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time specified
by t
and t
dependent on the timing relationships between these
parameters.
Write Cycle
A write cycle is initiated by the falling edge of CAS and WE,
whichever occurs last. The input data must be valid at or
before the falling edge of CAS or WE, whichever occurs
last.
4
CP
has elapsed.
AR
OE
. Data Out becomes valid only when t
are all satisfied. As a result, the access time is
RAS
time has expired. A new cycle
RAC
, t
AA
, t
CAC
RP
,
Refresh Cycle
To retain data, 1,024 refresh cycles are required in each
16 ms period . There are two ways to refresh the memory:
1. By clocking each of the 1,024 row addresses (A0
2. Using a CAS-before-RAS refresh cycle. CAS-before-
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Power-On
After application of the V
200 µs is required followed by a minimum of eight initial-
ization cycles (any combination of cycles containing a
RAS signal).
During power-on, it is recommended that RAS track with
V
CC
through A9) with RAS at least once every 16 ms . Any
read, write, read-modify-write or RAS-only cycle re-
freshes the addressed row.
RAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 10-bit counter provides the row ad-
dresses and the external address inputs are ignored.
or be held at a valid V
Integrated Circuit Solution Inc.
CC
IH
to avoid current surges.
supply, an initial pause of
DR032-0A 10/29/2001

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