CEM9926A_10 CET [Chino-Excel Technology], CEM9926A_10 Datasheet - Page 3

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CEM9926A_10

Manufacturer Part Number
CEM9926A_10
Description
Dual N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
900
750
600
450
300
150
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
8
6
4
2
0
0
0.0
-50
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
0.5
DS
J
, Junction Temperature( C)
2
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
V
0
with Temperature
GS
1.0
=4.5,3.5,2.5V
25
4
50
1.5
75
6
2.0
C oss
C rss
C iss
100
8
2.5
125
3.0
150
10
3
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
25
20
15
10
5
0
1
0
-1
-100
Figure 6. Body Diode Forward Voltage
0.0
0.4
V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=6A
V
, Body Diode Forward Voltage (V)
T
T
=4.5V
0.5
GS
J
-50
J
=125 C
, Junction Temperature( C)
CEM9926A
0.6
, Gate-to-Source Voltage (V)
with Temperature
1.0
0
25 C
0.8
50
1.5
1.0
100
2.0
-55 C
1.2
150
2.5
200
1.4
3.0

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