CEM4269_10 CET [Chino-Excel Technology], CEM4269_10 Datasheet - Page 3

• Manufacturer Part Number: CEM4269_10
• Description: Dual Enhancement Mode Field Effect Transistor (N and P Channel)
• Manufacturer: CET [Chino-Excel Technology]

P-Channel Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
Parameter
c
d
d
b
c
R
Symbol
V
BV
t
t
C
V
C
Q
I
GS(th)
DS(on)
C
d(on)
d(off)
Q
I
g
I
GSSF
Q
GSSR
I
t
DSS
t
SD
oss
iss
FS
rss
gd
S
r
f
gs
g
DSS
3
T
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
A
GS
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 25 C unless otherwise noted
Test Condition
= 0V, I
= -40V, V
= 20V, V
= -20V, V
= V
= -10V, I
= -4.5V, I
= -5V, I
= -20V, V
= -20V, I
= -10V, R
= -20V, I
= -10V
= 0V, I
DS
, I
D
S
D
D
= -250 µ A
= -1.0A
D
D
D
= -4.8A
D
DS
GS
DS
GS
GEN
= -250 µ A
= -5A,
= -5A
= -5A,
= -2A
= 0V
= 0V
= 0V
= 0V,
= 3Ω
Min
-40
-1
CEM4269
1125
Typ
150
100
2.5
3.5
12
33
20
3
5
4
Max
-100
-1.0
-1.0
100
43
65
24
30
66
26
-1
-3
8
Units
mΩ
mΩ
nA
nA
nC
nC
nC
µ A
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V