CED3060 CET [Chino-Excel Technology], CED3060 Datasheet - Page 3

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CED3060

Manufacturer Part Number
CED3060
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
3600
3000
2400
1800
1200
600
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
0
-50
0
Figure 5. Gate Threshold Variation
0
V
I
C rss
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
5
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
V
0.5
Figure 3. Capacitance
0
GS
with Temperature
=10,8,6V
25
10
50
C iss
C oss
1
75
15
100
1.5
20
125
150
25
2
CED3060/CEU3060
3
10
10
10
100
2.2
1.9
1.6
1.3
1.0
0.7
0.4
80
60
40
20
0
2
1
0
-100
Figure 6. Body Diode Forward Voltage
0.6
V
1
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=30A
T
V
, Body Diode Forward Voltage (V)
T
J
=10V
=125 C
GS
-50
J
, Junction Temperature( C)
0.8
, Gate-to-Source Voltage (V)
with Temperature
0
2
1.0
25 C
50
1.2
100
3
-55 C
1.4
150
200
1.6
4

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