CEM4301_10 CET [Chino-Excel Technology], CEM4301_10 Datasheet - Page 3

no-image

CEM4301_10

Manufacturer Part Number
CEM4301_10
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1500
1250
1000
750
500
250
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
10
0
8
6
4
2
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
-V
D
Figure 1. Output Characteristics
DS
-V
=-250µA
-V
GS
-25
T
=V
DS
J
DS
=10,6,5V
, Junction Temperature( C)
5
GS
1
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
with Temperature
25
10
2
50
C iss
C oss
C rss
75
15
3
100
20
4
125
150
25
5
3
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
10
8
6
4
2
0
1
0
-1
-100
Figure 6. Body Diode Forward Voltage
0.4
-V
0
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
T
GS
Variation with Source Current
=-6A
J
-V
=125 C
, Body Diode Forward Voltage (V)
T
=-10V
GS
-50
J
, Junction Temperature( C)
0.6
1
, Gate-to-Source Voltage (V)
with Temperature
CEM4301
0
25 C
0.8
2
50
1.0
-55 C
3
100
1.2
150
4
200
1.4
5

Related parts for CEM4301_10