CEB65A3 CET [Chino-Excel Technology], CEB65A3 Datasheet - Page 3

• Manufacturer Part Number: CEB65A3
• Description: N-Channel Enhancement Mode Field Effect Transistor
• Manufacturer: CET [Chino-Excel Technology]

1200
1000
800
600
400
200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
25
20
15
10
0
5
0
-50
0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
V
, Junction Temperature( C)
5
GS
GS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
0
=10, 9V
1
with Temperature
25
10
50
2
75
15
C iss
C oss
C rss
100
3
V
20
V
V
GS
GS
GS
125
=5V
=4V
=3V
150
25
4
CEP65A3/CEB65A3
3
10
10
10
10
2.2
1.9
1.6
1.3
1.0
0.7
0.4
75
60
45
30
15
0
3
2
1
0
-100
Figure 6. Body Diode Forward Voltage
0.4
0
V
Figure 4. On-Resistance Variation
I
V
SD
D
Figure 2. Transfer Characteristics
GS
Variation with Source Current
=35A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
, Junction Temperature( C)
0.6
, Gate-to-Source Voltage (V)
1
with Temperature
T
J
=125 C
0
0.8
50
2
25 C
1.0
100
3
1.2
150
-55 C
200
1.4
4