M7002NND03 WILLAS [WILLAS ELECTRONIC CORP], M7002NND03 Datasheet
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M7002NND03
Manufacturer Part Number
M7002NND03
Description
WBFBP-03B Plastic-Encapsulate MOSFETS
Manufacturer
WILLAS [WILLAS ELECTRONIC CORP]
Datasheet
1.M7002NND03.pdf
(2 pages)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
2012-0
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WBFBP-03B Plastic-Encapsulate MOSFETS
1.0A SURFACE MOUNT SCHOTTKY
2012-06
MOSFET( N-Channel )
DESCRIPTION
High cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to 400mA DC
and can deliver pulsed currents up to 2A. These products are particularly suited
for low voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High density cell design for low R
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
APPLICATION
N-Channel Enhancement Mode Field Effect Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
Pb-Free package is available
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
MAXIMUM RATINGS (T
V
V
I
P
R
T
T
D
J
stg
DS
GSS
D
θJA
•
•
•
•
•
•
•
•
•
•
Mechanical data
•
•
•
•
•
•
Features
RoHS product for packing code suffix "G"
Batch process design, excellent power dissipation offers
Low profile surface mounted application in order to
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
Halogen free product for packing code suffix "H"
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
better reverse leakage current and thermal resistance.
optimize board space.
MIL-STD-19500 /228
Symbol
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
WILLAS
Method 2026
RATINGS
Thermal Resistance from Junction to Ambient
Storage Temperature
Drain-Source Voltage
Gate-Source Voltage - Continuous
Maximum Drain Current - Pulsed
Power Dissipation
Junction Temperature
a
=25 ℃ unless otherwise noted )
@T A=25℃
@T A=125℃
DS(ON)
SYMBOL
SYMBOL
V
V
TSTG
R
V
I
FSM
V
RRM
RMS
C
T
I
I
ΘJA
BARRIER RECTIFIERS -20V- 200V
DC
O
R
J
F
J
Parameter
FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
FM120-M H FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
20
14
20
SOD-123
-55 to +125
,
13
30
21
30
0.50
Package outline
40
40
14
28
0.031(0.8) Typ.
PACKAGE
50
35
50
15
Dimensions in inches and (millimeters)
0.70
- 65 to +175
16
60
42
60
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
1. GATE
2. SOURCE
3. DRAIN
WILLAS ELECTRONIC CORP.
120
1.0
0.5
10
30
40
WILLAS ELECTRONIC CORP.
SOD-123H
0.146(3.7)
0.130(3.3)
-55~+150
Value
150
±20
150
18
115
833
80
56
80
60
MARKING: 72
M7002NND03
0.85
-55 to +150
BACK
TOP
100
100
10
70
G
FM1200-M
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.012(0.3) Typ.
Pb Free Product
FM120-M
0.031(0.8) Typ.
G
S
72
D
S
D
0.9
115
150
105
150
THRU
D
Units
mW
mA
℃
℃/W
℃
G
S
V
V
120
200
140
200
0.92
mAmps
Volts
Volts
Volts
℃/W
UNIT
Volts
Amps
Amps
UNIT
PF
℃
℃
Related parts for M7002NND03
M7002NND03 Summary of contents
Page 1
... Parameter -55 to +125 T J TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- FM120-M M7002NND03 FM1200-M Pb Free Product PACKAGE SOD-123H WBFBP-03B (1.2×1.2×0.5) TOP 0.146(3.7) unit: mm 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 1. GATE BACK 2. SOURCE 3 ...
Page 2
... I FSM R ΘJA -55 to +125 T J TSTG SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200- FM120-M M7002NND03 THRU FM1200-M Pb Free Product SOD-123H Min Typ Max 0.146(3.7) 60 0.130(3.3) 0.012(0.3) Typ. 1 2.5 ±80 0.071(1.8) 0.08 0.056(1.4) 500 500 1 7 ...