2SD601AX2 PANASONIC [Panasonic Semiconductor], 2SD601AX2 Datasheet
2SD601AX2
Manufacturer Part Number
2SD601AX2
Description
Silicon NPN epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SD601AX2.pdf
(3 pages)
Composite Transistors
XP02501
Silicon NPN epitaxial planar type
For general amplification
■ Features
■ Basic Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• Two elements incorporated into one package
• Reduction of the mounting area and assembly cost by one half
• 2SD0601A (2SD601A) × 2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
h
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
(Base-coupled transistors)
FE
ratio
2. * : Ratio between 2 elements
*
Parameter
Parameter
(XP2501)
a
Symbol
= 25°C ± 3°C
V
V
V
h
Symbol
T
V
I
P
FE(Small/
I
T
V
V
V
CBO
CEO
EBO
a
CP
Large)
I
I
C
stg
CE(sat)
C
T
h
CBO
CEO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
C
C
E
C
100
200
150
150
Note) The part number in the parenthesis shows conventional part number.
CB
CE
CE
CE
CB
CB
60
50
= 10 µA, I
= 10 µA, I
= 2 mA, I
= 100 mA, I
7
SJJ00156BED
= 10 V, I
= 10 V, I
= 10 V, I
= 20 V, I
= 10 V, I
= 10 V, I
B
C
E
Conditions
Unit
mW
B
C
C
E
E
mA
mA
= 0
E
°C
°C
V
V
V
= 0
= 0
B
= 0
= 0
= 2 mA
= 2 mA
= 0, f = 1 MHz
= −2 mA, f = 200 MHz
= 10 mA
Marking Symbol: 5W
Internal Connection
1: Emitter (Tr1)
2: Base
3: Emitter (Tr2)
EIAJ: SC-88A
10˚
(0.65) (0.65)
0.20
1
5
1.3
2.0
±0.05
±0.1
±0.1
0.50
Min
160
2
Tr1
60
50
7
5
1
4
3
0.99
Typ
150
3.5
0.1
2
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Tr2
4
3
Max
460
0.12
0.3
100
0.1
+0.05
–0.02
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2SD601AX2 Summary of contents
Page 1
Composite Transistors XP02501 (XP2501) Silicon NPN epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half ■ Basic Part Number • ...
Page 2
XP02501 250 200 150 100 120 160 ( °C ) Ambient temperature T a 1 25° 1.0 ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...