Q67000-S007 SIEMENS [Siemens Semiconductor Group], Q67000-S007 Datasheet - Page 6

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Q67000-S007

Manufacturer Part Number
Q67000-S007
Description
SIPMOS Small-Signal Transistor (N channel Enhancement mode)
Manufacturer
SIEMENS [Siemens Semiconductor Group]
Datasheet
Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
Semiconductor Group
D
I
I
D
D
=
0.38
0.32
0.28
0.24
0.20
0.16
0.12
0.08
0.04
0.00
0.75
0.65
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
V
A
A
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
)
P
tot
1
p
= 0W
p
= 80 µs , T
= 80 µs
2
l
j
k
3
i
h
g
f
4
j
e
= 25 °C
5
6
D
= f ( V
7
c
a
d
b
8
V GS [V]
GS
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
)
V
V
10.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
7.0
8.0
9.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
g
DS (on)
DS (on)
fs
0.40
0.30
0.25
0.20
0.15
0.10
0.05
0.00
19
16
14
12
10
0.00
S
0.00
8
6
4
2
0
=
V
V
GS
GS
2.5
3.0
a
a
p
I
[V] =
[V] =
0.04
D
0.10
p
3.5
b
= 80 µs, T
)
= 80 µs,
a
4.0
c
0.08
0.20
4.5
d
5.0
0.12
e
j
0.30
= 25 °C
b
5.5
f
0.16
6.0
g
0.40
7.0
h
0.20
8.0
fs
i
0.50
Sep-13-1996
BSS 119
= f ( I
9.0
j
I
A
D
I
j
D
c
A
10.0
k
D
f
h
k
i
d
0.28
)
0.65
g
e

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