Q67000-S279 SIEMENS [Siemens Semiconductor Group], Q67000-S279 Datasheet - Page 5

• Manufacturer Part Number: Q67000-S279
• Description: IGBT Transistor (N channel MOS input voltage-controlled High switch speed Very low tail current)
• Manufacturer: SIEMENS [Siemens Semiconductor Group]

Typ. saturation characteristic
V
CE(sat)
=
f
(
V
GE
); parameter:
T
j
= 125 ˚C
Typ. gate charge
parameter:
I
C plus
= 1 A
V
GE
=
f
(
Q
Gate
)
BSP 280