CM100TU-12E Mitsubishi, CM100TU-12E Datasheet - Page 2

• Manufacturer Part Number: CM100TU-12E
• Description: cm100tu-12e...
• Manufacturer: Mitsubishi

MAXIMUM RATINGS
Note 1. I
*
*
*
ELECTRICAL CHARACTERISTICS
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
t
Q
V
R
R
R
R
R
1 : Tc measured point is indicated in OUTLINE DRAWING.
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
3 : If you use this value, R
C
CM
E
EM (Note 1)
CES
GES
d(on)
r
d(off)
f
rr
Symbol
Symbol
j
stg
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
EC(Note 1)
ies
oes
res
th(j-c)
th(j-c)
th(c-f)
th(j-c’)
G
G
rr (Note 1)
(Note 1)
—
—
(Note 1)
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Q
R
Q
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Weight
Collector cutoff current
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Contact thermal resistance
Thermal resistance
External gate resistance
Collector current
Emitter current
Torque strength
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Thermal resistance
, t
rr
, Q
rr
, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
Parameter
Parameter
th(f-a)
(Tj = 25 C)
should be measured just under the chips.
j
) should not increase beyond 150 C.
*1
(Tj = 25 C)
G-E Short
C-E Short
T
Pulse
T
Pulse
T
Main terminal to base plate, AC 1 min.
Main Terminal M4
Mounting holes M5
Typical value
V
I
V
T
T
V
V
V
V
V
R
I
I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips
C
E
E
C
C
C
CE
GE
j
j
CC
GE1
CE
GE
CC
G
= 25 C
= 125 C
= 100A
= 100A, V
= 10mA, V
= 25 C
= 25 C
= 25 C
= 6.3 , Inductive load switching operation
= V
= V
= 0V
= 300V, I
= 300V, I
= 10V
= V
CES
CES
GE2
, V
, V
GE
CE
= 15V
C
C
http://store.iiic.cc/
GE
CE
= 100A, V
= 100A
= 0V
= 10V
I
C
= 0V
= 0V
= 100A, V
Test conditions
Conditions
GE
= 15V
GE
= 15V
j
) does not exceed T
*2
(1/6 module)
(Note 2)
(Note 2)
jmax
HIGH POWER SWITCHING USE
MITSUBISHI IGBT MODULES
rating.
Min.
6.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5
CM100TU-12F
–40 ~ +150
–40 ~ +125
1.3 ~ 1.7
2.5 ~ 3.5
Ratings
Limits
2500
0.11
Typ.
600
100
200
100
200
350
570
620
1.6
1.6
1.9
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
20
6
0.28
Max.
0.35
0.70
100
300
250
150
2.2
1.8
2.6
20
27
80
63
—
—
—
—
1
7
1
3
Aug. 1999
N • m
N • m
Unit
Unit
C/W
mA
nC
nF
ns
ns
W
V
V
V
A
A
V
V
V
g
C
C
A
C