MT46V32M16P-5B IT:F TR Micron, MT46V32M16P-5B IT:F TR Datasheet - Page 64
MT46V32M16P-5B IT:F TR
Manufacturer Part Number
MT46V32M16P-5B IT:F TR
Description
Ic Ddr Sdram 512mb 66tsop
Manufacturer
Micron
Datasheet
1.MT46V128M4BN-6D.pdf
(91 pages)
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Figure 29:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
Command
Command
Command
Address
Address
Address
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
CK
CK
CK
Nonconsecutive READ Bursts
Notes:
Bank,
Bank,
Bank,
Col n
Col n
READ
Col n
READ
READ
T0
T0
T0
1. DO n (or b) = data-out from column n (or column b).
2. BL = 4 or BL = 8 (if BL = 4, the bursts are concatenated; if BL = 8, the second burst interrupts
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Three (or seven) subsequent elements of data-out appear in the programmed order follow-
5. Shown with nominal
the first).
ing DO b.
CL = 2
NOP
NOP
NOP
T1
T1
T1
CL = 2.5
CL = 3
NOP
NOP
NOP
T2
T2
T2
t
AC,
DO
n
t
T2n
T2n
DQSCK, and
64
DO
n
Bank,
Col b
Bank,
Col b
Bank,
Col b
READ
READ
READ
T3
T3
T3
DO
n
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
DQSQ.
T3n
T3n
T3n
512Mb: x4, x8, x16 DDR SDRAM
T4
T4
T4
NOP
NOP
NOP
Transitioning Data
T4n
T5
T5
T5
NOP
NOP
NOP
©2000 Micron Technology, Inc. All rights reserved.
DO
b
T5n
T5n
Don’t Care
DO
b
Operations
T6
T6
T6
NOP
NOP
NOP
DO
b
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