K6X0808C1D-BF55000 Samsung, K6X0808C1D-BF55000 Datasheet - Page 6

• Manufacturer Part Number: K6X0808C1D-BF55000
• Description: power, ram, low, Memory, Semiconductors and Actives, bit, cmos
• Manufacturer: Samsung

K6X0808C1D Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
OE
Data out
t
HZ
levels.
interconnection.
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
(Address Controlled
(WE=V
HZ
OH
(Max.) is less than
t
AA
t
CO
IH
t
6
)
OE
t
AA
,
t
CS=OE=V
RC
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
)
Data Valid
CMOS SRAM
t
t
OHZ
OH
t
HZ
Revision 3.0
March 2005