BUK7608-40B /T3 Philips, BUK7608-40B /T3 Datasheet - Page 9

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BUK7608-40B /T3

Manufacturer Part Number
BUK7608-40B /T3
Description
Semiconductors and Actives, mosfet
Manufacturer
Philips
Datasheet
Philips Semiconductors
9397 750 11234
Product data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
V
V
I D
(A)
100
DS
GS
75
50
25
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
2
T j = 175 C
4
I S
(A)
100
T j = 25 C
75
50
25
0
6
0.0
V GS (V)
03nm27
8
Rev. 01 — 08 April 2003
0.3
T j = 175 C
0.6
Fig 14. Gate-source voltage as a function of gate
T
V GS
j
(V)
= 25 C; I
10
0.9
8
6
4
2
0
charge; typical values.
T j = 25 C
0
V SD (V)
03nm24
D
= 25 A
1.2
10
BUK75/7608-40B
TrenchMOS™ standard level FET
V DD = 14 V
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
20
V DD = 32 V
30
Q G (nC)
03nm25
40
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