BFG520 T/R Philips, BFG520 T/R Datasheet
BFG520 T/R
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BFG520 T/R Summary of contents
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DISCRETE SEMICONDUCTORS DATA SHEET BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 ...
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... Philips Semiconductors NPN 9 GHz wideband transistor FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc ...
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... Philips Semiconductors NPN 9 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO V emitter-base voltage EBO I DC collector current C P total power dissipation tot T storage temperature stg T junction temperature j THERMAL RESISTANCE ...
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... Philips Semiconductors NPN 9 GHz wideband transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER I collector cut-off current CBO h DC current gain FE C emitter capacitance e C collector capacitance c C feedback capacitance re f transition frequency T G maximum unilateral UM power gain (note insertion power gain ...
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... Philips Semiconductors NPN 9 GHz wideband transistor 400 handbook, halfpage P tot (mW) 300 200 100 100 Fig.3 Power derating curve. 0.6 handbook, halfpage C re (pF) 0.4 0 MHz. C Fig.5 Feedback capacitance as a function of collector-base voltage. September 1995 BFG520; BFG520/X; BFG520/XR MRA670-1 handbook, halfpage ...
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... Philips Semiconductors NPN 9 GHz wideband transistor In Figs maximum unilateral power gain; UM MSG = maximum stable gain; G max gain. 25 handbook, halfpage gain (dB) MSG 900 MHz amb Fig.7 Gain as a function of collector current. 50 handbook, halfpage ...
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... Philips Semiconductors NPN 9 GHz wideband transistor 20 handbook, halfpage d im (dB Fig.11 Intermodulation distortion as a function of collector current. 5 handbook, halfpage F min (dB ass 3 2000 MHz 2 F min 1000 MHz 1 900 MHz 500 MHz amb Fig ...
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... Philips Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth pot. unst. region 180 mA 900 MHz handbook, full pagewidth G max = 13 dB 180 mA GHz September 1995 BFG520; BFG520/X; BFG520/XR stability 90 circle 1 135 ...
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... Philips Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 mA Fig.17 Common emitter input reflection coefficient (S handbook, full pagewidth 180 mA Fig.18 Common emitter forward transmission coefficient (S September 1995 90 1 135 0.5 3 GHz 0.2 0.2 0 0.2 0.5 135 ...
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... Philips Semiconductors NPN 9 GHz wideband transistor handbook, full pagewidth 180 0. mA Fig.19 Common emitter reverse transmission coefficient (S handbook, full pagewidth 180 mA Fig.20 Common emitter output reflection coefficient (S September 1995 BFG520; BFG520/X; BFG520/XR 90 135 ...
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... Philips Semiconductors NPN 9 GHz wideband transistor PACKAGE OUTLINES Plastic surface mounted package; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143B September 1995 BFG520; BFG520/X; BFG520/ ...
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... Philips Semiconductors NPN 9 GHz wideband transistor Plastic surface mounted package; reverse pinning; 4 leads DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.48 0.88 0.1 mm 0.9 0.38 0.78 OUTLINE VERSION IEC SOT143R September 1995 BFG520; BFG520/X; BFG520/ ...
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... These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. ...