EMH1405-TL-H ON Semiconductor, EMH1405-TL-H Datasheet - Page 2

• Manufacturer Part Number: EMH1405-TL-H
• Description: Mosfet n-Ch 30v 8.5a Emh8
• Manufacturer: ON Semiconductor

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
P.G
10V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0V
0
D.C.≤1%
PW=10μs
0
V IN
0.1
Parameter
0.2
Drain-to-Source Voltage, V DS -- V
V IN
G
50Ω
0.3
I D -- V DS
0.4
V DD =15V
D
0.5
S
I D =4A
R L =5Ω
0.6
EMH1405
V (BR)DSS
I DSS
I GSS
V GS (off)
| yfs |
R DS (on)1
R DS (on)2
R DS (on)3
Ciss
Coss
Crss
t d (on)
t r
t d (off)
t f
Qg
Qgs
Qgd
V SD
Symbol
V OUT
0.7
V GS =2.5V
0.8
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS =±16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =4A
I D =4A, V GS =10V
I D =2A, V GS =4.5V
I D =2A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
See specifi ed Test Circuit.
V DS =15V, V GS =10V, I D =8.5A
V DS =15V, V GS =10V, I D =8.5A
V DS =15V, V GS =10V, I D =8.5A
I S =8.5A, V GS =0V
0.9
IT15387
1.0
EMH1405
Conditions
10
9
8
7
6
5
4
3
2
1
0
0
1
Gate-to-Source Voltage, V GS -- V
min
I D -- V GS
1.2
2
30
Ratings
typ
820
130
4.4
9.5
2.6
2.7
0.8
3
14
24
30
90
25
63
28
15
max
±10
2.6
1.2
4
19
34
42
No. A1667-2/4
V DS =10V
1
IT15388
Unit
mΩ
mΩ
mΩ
μA
μA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
S
V
V
V
5