FLU17XMT Sumitomo Electric, FLU17XMT Datasheet

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FLU17XMT

Manufacturer Part Number
FLU17XMT
Description
L-Band Power GaAs FET(32.5dBm@2.06GHz)
Manufacturer
Sumitomo Electric
Datasheet
1.FLU17XMT.pdf (4 pages)
Edition 1.2
July 1999
FEATURES
• High Output Power: P 1dB =32.5dBm (Typ.)
• High Gain: G 1dB =13.5dB (Typ.)
• High PAE: η add =46% (Typ.)
• Hermetic Metal/Ceramic (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FLU17XM is a GaAs FET designed for base station applications in the
PCN/PCS frequency range. This is a new product series that uses a surface
mount package that has been optimized for high volume cost driven applications.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
Case Style: XM
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: The RF parameters are measured on a lot basis by sample testing
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Output Power at 1 dB G.C.P.
Power Gain at 1 dB G.C.P.
Power Added Efficiency
Thermal Resistance
1. The drain - source operating voltage (V DS ) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with
3. The operating channel temperature (T ch ) should not exceed 145°C.
at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.
gate resistance of 200Ω.
Item
Item
Symbol
V GS
V DS
T stg
T ch
PT
Symbol
V
P
G
I
η
DSS
gm
R
V
GSO
1dB
add
1dB
th
p
V
V
V
I
V
f=2.0 GHz
I
Channel to Case
L-Band Medium & High Power GaAs FET
GS
DS
DS
DS
DS
DS
1
Tc = 25°C
Condition
=0.6I
= -30µA
= 5V, V
= 5V, I
= 5V, I
= 10V
Conditions
DSS
DS
DS
GS
=400mA
=30mA
=0V
-65 to +175
Min.
31.5
12.5
-1.0
Rating
-5
-
-
-
-
+175
7.5
15
-5
Limits
Typ.
32.5
13.5
600
300
-2.0
46
15
-
G.C.P.: Gain Compression Point
FLU17XM
Max.
900
-3.5
20
-
-
-
-
-
Unit
°C
°C
W
V
V
°C/W
dBm
Unit
mA
mS
dB
%
V
V

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FLU17XMT Summary of contents

Page 1

FEATURES • High Output Power: P 1dB =32.5dBm (Typ.) • High Gain: G 1dB =13.5dB (Typ.) • High PAE: η add =46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET ...

Page 2

FLU17XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 100 Case Temperature (°C) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 600 400 200 0 150 200 OUTPUT POWER vs. INPUT POWER V DS ...

Page 3

GHz 3 -j10 2 1 0.5 GHz -j25 -j50 FREQUENCY S11 (MHZ) MAG ANG 100 .954 -33.9 500 .839 -112.6 1000 .831 -146.9 1500 ...

Page 4

FLU17XM L-Band Medium & High Power GaAs FET 3.8±0.15 (0.150) 3.35 (0.132) 1 6.3 (0.248) Case Style "XM" Metal-Ceramic Hermetic Package 2 3 0.7 (0.028) 4 2.865 (0.112) 2.265 (0.089) 2.0±0.15 3.13±0.15 1. Gate 2. Source 3. Drain Unit: mm(inches) ...

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