MC100EP56DT ON Semiconductor, MC100EP56DT Datasheet - Page 7

• Manufacturer Part Number: MC100EP56DT
• Description: IC MUX DUAL 2:1 5V DIFF 20TSSOP
• Manufacturer: ON Semiconductor
• Series: 100EPr
• Type: Differential Digital Multiplexerr

Specifications of MC100EP56DT

• Circuit: 2 x 2:1
• Independent Circuits: 1
• Voltage Supply Source: Dual Supply
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Output High, Low: -
• Other names: MC100EP56DTOS

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
20. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
21. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
Table 9. AC CHARACTERISTICS
t
t
t
f
t
V
t
t
PLH
PHL
SKEW
Symbol
max
JITTER
r
f
PP
are measured from the cross point of the inputs to the cross point of the outputs.
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Maximum Frequency
(See Figure 2 F
Propagation Delay to
Output Differential
Within−Device Skew (Note 21)
Device to Device Skew
Random Clock Jitter
(See Figure 2 F
Input Voltage Swing
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%)
Characteristic
(See Application Note AND8020/D − Termination of ECL Logic Devices.)
Figure 3. Typical Termination for Output Driver and Device Evaluation
Driver
Device
max
max
/JITTER)
/JITTER)
COM_SEL to Q, Q
1000
800
600
400
200
1.0
É É É É É É É É É É É É É É
V
SEL to Q, Q
Q
Q
CC
D to Q, Q
= 0 V; V
Q, Q
Figure 2. F
EE
1.5
= −3.0 V to −5.5 V or V
Min
250
250
250
150
70
Z
Z
http://onsemi.com
FREQUENCY (GHz)
o
o
= 50 W
= 50 W
−40°C
(JITTER)
Typ
340
340
350
800
120
max
> 3
0.2
50
3.3 V
5 V
2.0
50 W
V
7
/Jitter @ 255C
TT
= V
1200
Max
450
450
450
100
200
170
< 1
V
CC
TT
CC
− 2.0 V
50 W
Min
270
270
270
150
2.5
= 3.0 V to 5.5 V; V
80
25°C
Typ
360
340
360
800
130
> 3
0.2
50
CC
D
D
3.0
− 2.0 V.
1200
Max
470
470
470
100
200
180
10
< 1
9
8
7
6
5
4
3
É É É É
2
1
É É
0
EE
Receiver
Device
= 0 V (Note 20)
Min
300
300
300
150
100
85°C
Typ
400
400
400
800
150
> 3
0.2
50
1200
Max
500
500
500
100
200
230
< 1
Unit
GHz
mV
ps
ps
ps
ps