SMMBTA56LT3G ON Semiconductor, SMMBTA56LT3G Datasheet - Page 2

• Manufacturer Part Number: SMMBTA56LT3G
• Description: MMBT Series 80 V 500 mA Surface Mount PNP Silicon Driver Transistor - SOT-23
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
4. f
+10 V
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
0
Collector −Emitter Breakdown Voltage (Note 3)
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current −Gain − Bandwidth Product (Note 4)
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
T
C
E
C
C
C
C
C
is defined as the frequency at which |h
MMBTA55
MMBTA56, SMMBTA56
CE
CB
MMBTA55
CB
MMBTA56, SMMBTA56
t
r
= −1.0 mAdc, I
= −100 mAdc, I
= −10 mAdc, V
= −100 mAdc, V
= −100 mAdc, I
= −100 mAdc, V
= −100 mAdc, V
5.0 ms
= 3.0 ns
= −60 Vdc, I
= −80 Vdc, I
= −60 Vdc, I
TURN-ON TIME
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
V
in
E
E
B
C
B
CE
B
5.0 mF
= 0)
= 0)
= 0)
CE
CE
CE
= 0)
= 0)
= −10 mAdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc)
= −1.0 Vdc, f = 100 MHz)
-1.0 V
100
100
R
Characteristic
B
(T
fe
V
A
| extrapolates to unity.
CC
Figure 1. Switching Time Test Circuits
= 25C unless otherwise noted)
R
+40 V
L
* C
S
OUTPUT
http://onsemi.com
t 6.0 pF
2
t
r
5.0 ms
= 3.0 ns
TURN-OFF TIME
V
V
Symbol
V
V
(BR)CEO
(BR)EBO
I
CE(sat)
I
BE(on)
h
CBO
CES
V
f
FE
T
in
5.0 mF
+V
BB
100
100
−4.0
Min
−60
−80
100
100
50
−
−
−
−
−
R
B
V
−0.25
CC
Max
−0.1
−0.1
−0.1
−1.2
−
−
−
−
−
−
R
+40 V
L
* C
S
OUTPUT
mAdc
mAdc
MHz
Unit
t 6.0 pF
Vdc
Vdc
Vdc
Vdc
−